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|Title: ||A scalable high-frequency noise model for bipolar transistors with application to optimal transistor sizing for low-noise amplifier design|
|Authors: ||Voinigescu, Sorin|
Maliepaard, Michael C.
Showell, Jonathan L.
Babcock, Greg E.
Harame, David L.
|Issue Date: ||1997|
|Citation: ||S. Voinigescu, M. C. Maliepaard, J. L. Showell, G. E. Babcock, D. Marchesan, M. Schroter, P. Schvan, D. L. Harame,'A scalable high-frequency noise model for bipolar transistors with application to optimal transistor sizing for low-noise amplifier design', IEEE Journal of Solid-State Circuits, vol.32, no.9, pp.1430-1439, 1997|
|Rights: ||©2007 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.|
|Appears in Collections:||The Edward S. Rogers Sr. Department of Electrical and Computer Engineering|
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