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Please use this identifier to cite or link to this item: http://hdl.handle.net/1807/11202

Title: Development of 8-Hydroxyquinoline Metal Based Organic Light-emitting Diodes
Authors: Feng, Xiaodong
Advisor: Lu, Zhenghong
Department: Materials Science and Engineering
Keywords: Organic Light-Emitting Diodes
8-Hydroxyquinoline Metal
Issue Date: 31-Jul-2008
Abstract: Because of its potential application for flat panel displays, solid-state lighting and 1.5 µm emitter for fiber optical communications, organic light-emitting diodes (OLEDs) have been intensively researched. One of the major problems with current OLED technology relates to inefficient electron injection at the cathode interface, which causes high driving voltage and poor device stability. Making a low resistance cathode contact for electron injection is critical to device performance. This work mainly focuses on cathode interface design and engineering. The Ohmic contact using a structure of C60/LiF/Al has been developed in electron only devices. It is found that application of the C60/LiF/Al contact to Alq based OLEDs leads to a dramatic reduction in driving voltages, a significant improvement in power efficiency, and a much slower aging process. A new cathode structure based on metal-organic-metal (MOM) tri-layer films has been developed. It is found that MOM cathodes reduce reflection by deconstructive optical interference from two metal films. The absolute reflectance from the MOM tri-layer films can be reduced to as low as 7% in the visible light spectrum. In actual working devices, the reflectance can be reduced from ~80% to ~ 20%. MOM cathodes provide a potential low-cost solution for high contrast full-color OLED displays. Low voltage Erq based OLEDs at 1.5 µm emission have been developed. The Erq/Ag cathode interface has been found to be efficient for electron injection. Dramatic improvement in driving voltage and power efficiency has been realized by implementing Bphen and C60 into Erq devices as an electron transport layer. Integration of Erq devices on Si wafers has also been demonstrated.
URI: http://hdl.handle.net/1807/11202
Appears in Collections:Doctoral
Department of Materials Science & Engineering - Doctoral theses

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