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|Title: ||Sensitive Solution-processed Quantum Dot Photodetectors|
|Authors: ||Konstantatos, Gerasimos|
|Advisor: ||Sargent, Edward H.|
|Department: ||Electrical and Computer Engineering|
|Issue Date: ||19-Jan-2009|
|Abstract: ||Optical sensing for imaging applications has traditionally been enabled by single-crystalline photodetectors. This approach has dramatically curtailed monolithic integration of a variety of optically-sensitive materials onto silicon read-out circuits.
The advent of solution-processed optoelectronic materials such as colloidal quantum dots offers the potential of a revolution in optoelectronics. Their solution-processibility enables low-cost monolithic integration with an arbitrary substrate. This dissertation presents the first high-sensitivity solution-processed photodetectors. It does so by leveraging the high degree of control offered by nanoscale materials engineering.
Material processing routes are developed to achieve sufficient carrier mobility and sensitization that lead to high photoconductive gain up to 10^3 A/W, observed for the first time in soft materials. A method to remove charge-transport-inhibiting moieties from the nanocrystal surface is developed. Surface treatment procedures are then advanced to prolong the carrier lifetime and thus sensitize the material. The sequence of these processing stages is crucial for the noise performance of the device. Processing conditions that lead to high photoconductive gain and low noise current are then reported to achieve highly sensitive photodetectors with reported D* on the order 10^13 Jones.
The spectral tunability offered by colloidal quantum dots enables monolithic multispectral photodetectors. The material challenges, imposed by the behaviour of matter in the nanoscale, are addressed to report sensitive photodetectors in the visible and infrared parts of spectrum.
Carrier lifetime determines the temporal response of a photoconductor. The abundance of trap states on the nanocrystal surface and their associated carrier lifetimes mandate careful attention in order to preserve the trap states that yield temporal response acceptable for imaging applications. It is shown for the first time that the temporal response of a quantum dot photoconductor can be tailored by careful control over surface chemistry. Materials species were identified as responsible for particular photocurrent temporal components. These findings are then exploited to isolate and remove surface species responsible for undesirably long time constants. A solution-processed photoconductive detector is reported that exhibits high sensitivity (D* ~10^12 Jones) and temporal response of 25 ms, suitable for imaging applications.|
|Appears in Collections:||Doctoral|
The Edward S. Rogers Sr. Department of Electrical & Computer Engineering - Doctoral theses
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