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Please use this identifier to cite or link to this item: http://hdl.handle.net/1807/24285

Title: W-Band Passive and Active Circuits in 65-nm Bulk CMOS for Passive Imaging Applications
Authors: Tomkins, Alexander
Advisor: Voinigescu, Sorin
Department: Electrical and Computer Engineering
Keywords: mm-wave
CMOS
passive imaging
LNA
switches
noise figure
peak detector
Issue Date: 7-Apr-2010
Abstract: The design and implementation of mm-wave switches, variable attenuators, and a passive imaging system in 65-nm CMOS are presented. The design and analysis of shunt switches is presented with a demonstration circuit showing record performance for a single-pole single-throw switch with 1.6dB loss and 30dB isolation at 94GHz. Single-pole double-throw (SPDT) switches are shown, with 4dB insertion loss in the W-band (75-110GHz), and the only reported SPDT switch operating in the D-band (110-170GHz). A novel technique for implementing digitally controlled variable attenuation is presented, resulting in variable attenuation between 4 and 30dB in the W-band. Finally, a W-band radiometer is described integrating a record-high gain CMOS LNA, SPDT switch, and peak detector. This is the highest-frequency imaging system in CMOS with this level of integration, offering a responsivity over 90kV/W, and a noise-equivalent power less than 0.2pW/√Hz.
URI: http://hdl.handle.net/1807/24285
Appears in Collections:Master
The Edward S. Rogers Sr. Department of Electrical & Computer Engineering - Master theses

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