test Browse by Author Names Browse by Titles of Works Browse by Subjects of Works Browse by Issue Dates of Works
       

Advanced Search
Home   
 
Browse   
Communities
& Collections
  
Issue Date   
Author   
Title   
Subject   
 
Sign on to:   
Receive email
updates
  
My Account
authorized users
  
Edit Profile   
 
Help   
About T-Space   

T-Space at The University of Toronto Libraries >
School of Graduate Studies - Theses >
Doctoral >

Please use this identifier to cite or link to this item: http://hdl.handle.net/1807/24918

Title: Development of Deep-level Photo-thermal Spectroscopy and Photo-Carrier Radiometry for the Characterization of Semi-insulating Gallium Arsenide (SI-GaAs)
Authors: Xia, Jun
Advisor: Mandelis, Andreas
Department: Mechanical and Industrial Engineering
Keywords: DLPTS
PCR
SI-GaAs
Photo-thermal
Issue Date: 2-Sep-2010
Abstract: Semi-insulating gallium arsenide (SI-GaAs) has gained great interest in recent years due to its wide application in optoelectronic devices and high-speed integrated circuits. An important feature of SI-GaAs is the high density of deep-level defect states, which control the electrical properties of the substrate by compensating the shallow defects. Over the years, deep-level transient spectroscopy (DLTS) and its variations have been the most effective tools employed for the characterization of deep-level defects. However, most of these techniques require a contact probe and tend to be quite restrictive in their applications’ scope. In this thesis deep-level photo-thermal spectroscopy (DLPTS), an all-optical rate-window-based technique, is presented as a novel noncontact technique for the characterization of deep-level defects in SI-GaAs. The signal-generation mechanism for DLPTS is the super-bandgap excitation of carriers, and the sub-bandgap detection of the defect’s thermal-emission process. Combined with the rate-window detection utilizing lock-in amplifiers, DLPTS measurements are performed in three different modalities: temperature-scan, pulse-rate scan, and time-scan. This work demonstrates that each mode provides unique information about the defect configuration, and, in combination, the modes offer a powerful tool for the study of defect properties and optoelectronic processes in SI-GaAs. A hierarchical carrier-emission theory is proposed to explain the thermal broadening (nonexponentiality) in photo-thermal spectra. The model is studied comparatively with the Gaussian distribution of activation energies, and their similarities demonstrate an ergodic equivalence of random energy distribution and the constrained hierarchical emission process. In addition, a rate-window gated photo-carrier radiometry (PCR) technique is developed. The original diffusion-based PCR theory is modified to reflect the signal domination by trap emission and capture rates in the absence of diffusion. Defect luminescence is collected and analyzed using photo-thermal temperature spectra and resonant detection combined with frequency scans. The study results in the identification of five radiative defect states and the defect-photoluminescence quantum efficiency.
URI: http://hdl.handle.net/1807/24918
Appears in Collections:Doctoral
Department of Mechanical & Industrial Engineering - Doctoral theses

Files in This Item:

File Description SizeFormat
Xia_Jun_201006_PhD_thesis.pdf1.33 MBAdobe PDF
View/Open

Items in T-Space are protected by copyright, with all rights reserved, unless otherwise indicated.

uoft