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Please use this identifier to cite or link to this item: http://hdl.handle.net/1807/25482

Title: Transient thermal modeling of a nanoscale hot spot in multilayered film
Authors: Ghai, Sartaj S.
Kim, Woo Tae
Amon, Cristina H.
Jhon, Myung S.
Keywords: silicon
elemental semiconductors
semiconductor thin films
nanostructured materials
Boltzmann equation
Issue Date: Apr-2006
Publisher: American Institute of Physics
Citation: Ghai SS, Kim WT, Amon CH, and Jhon MS. Transient thermal modeling of a nanoscale hot spot in multilayered film. Journal of Applied Physics. 2006;99(8).
Series/Report no.: Journal of Applied Physics
Vol. 99 No., 8
Abstract: A subcontinuum based lattice Boltzmann method is used to accurately model the transient thermal response of a nanoscale hot spot in solids. We developed the numerical scheme for the hot spot in a thin uniform material and extended the approach to study the multilayered materials. We observed that subcontinuum effects of high temperature rise become more prominent as the size of the film reduces to the scale of carrier mean free path. The thermal transport through a double layer is also considered, both for constant temperature difference across the double layer and hot-spot generation in one of the layers, using the diffusive mismatch scattering model at the interface. A finite temperature jump is observed at the interface whose magnitude depends upon the dimensions and properties of the material on the either side of the interface. The insight into the nanoscale thermal modeling, acquired in this work via a relatively simple model, will be critical for the design and operation of complex data storage and electronic systems, dealing with subcontinuum systems.
Description: Originally published in Journal of Applied Physics vol. 99 no. 8. American Institute of Physics and IEEE holds all copyright of this article. American Institute of Physics and IEEE allows the final published version of author's own work to be deposited in institutional repositories.
URI: http://jap.aip.org/resource/1/japiau/v99/i8/p08F906_s1
ISSN: 0021-8979
Appears in Collections:Faculty of Applied Science and Engineering Office of the Dean

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