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Please use this identifier to cite or link to this item: http://hdl.handle.net/1807/25483

Title: A novel heat transfer model and its application to information storage systems
Authors: Ghai, Sartaj S.
Kim, Woo Tae
Escobar, Rodrigo A.
Amon, Cristina H.
Jhon, Myung S.
Keywords: Boltzmann equation
electron-phonon interactions
elemental semiconductors
hard discs
heat conduction
magnetic heads
magnetic recording
metallic thin films
nanostructured materials
semiconductor process modelling
semiconductor storage
semiconductor thin films
thermal conductivity
Issue Date: May-2005
Publisher: American Institute of Physics
Citation: Ghai SS, Kim WT, Escobar RA, Amon CH, Jhon MS. A novel heat transfer model and its application to information storage systems. Journal of Applied Physics. 2005;97(10):1-3.
Series/Report no.: Journal of Applied Physics
Vol. 97 No. 10
Abstract: Lattice Boltzmann method (LBM) based on Boltzmann transport equation is developed to simulate the nanoscale heat transport in solids. The LBM can simulate both the metals and semiconductors by properly incorporating the energy carriers. We found that boundary scattering of phonons results in an anisotropic thermal transport in nanoscale solids. The electron-phonon coupling is introduced to accurately describe the thermal behavior of nanoscale confined solids. Our numerical tool will be suitable for simulating complex multiscale systems involving multiple energy carriers with different length and time scales, and is useful in magnetic recording technology when the thermal response plays a crucial role such as for reliability of the head-disk interface and the heat assisted magnetic recording systems.
Description: Originally published in Journal of Applied Physics vol. 97 no. 10. The American Institute of Physics and IEEE holds all copyright of this article. AIP and IEEE allows the final published version of author's own work to be deposited in institutional repositories.
URI: http://dx.doi.org/10.1063/1.1853896
ISSN: 0021-8979
Appears in Collections:Faculty of Applied Science and Engineering Office of the Dean

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