test Browse by Author Names Browse by Titles of Works Browse by Subjects of Works Browse by Issue Dates of Works
       

Advanced Search
Home   
 
Browse   
Communities
& Collections
  
Issue Date   
Author   
Title   
Subject   
 
Sign on to:   
Receive email
updates
  
My Account
authorized users
  
Edit Profile   
 
Help   
About T-Space   

T-Space at The University of Toronto Libraries >
School of Graduate Studies - Theses >
Master >

Please use this identifier to cite or link to this item: http://hdl.handle.net/1807/25593

Title: C60:LiF Hole Blocking Layer for Bulk-heterojunction Solar Cells
Authors: Gao, Dong
Advisor: Lu, Zhenghong
Department: Materials Science and Engineering
Keywords: C60:LiF
hole blocking layer
solar cell
Issue Date: 31-Dec-2010
Abstract: A standard procedure for P3HT:PCBM bulk-heterojunction solar cells has been developed. Fabrication conditions, such as environment; solution concentration, thickness of active layer or post-treatment methods are systematically optimized. The best device performance is obtained by slow-drying spin-coated P3HT:PCBM (1:0.8) blend layer with DCB as solvent. C60:LiF composite films with up to 80% LiF concentration as hole blocking layer have been developed to significantly increase power conversion efficiencies of OPV devices. The short-circuit current density is greatly enhanced, without sacrificing open-circuit voltage and fill factor. Due to its superior oxygen diffusion blocking effect, the C60:LiF composite layer also can provide a more effective passivation film than a thin LiF layer, resulting in an impressive enhancement in air stability of devices.
URI: http://hdl.handle.net/1807/25593
Appears in Collections:Master
Department of Materials Science & Engineering - Master theses

Files in This Item:

File Description SizeFormat
Gao_Dong_201011_MASc_thesis.pdf2.38 MBAdobe PDF
View/Open

Items in T-Space are protected by copyright, with all rights reserved, unless otherwise indicated.

uoft